bas 40-07w oct-07-1999 1 silicon schottky diode ? general-purpose diode for high-speed switching ? circuit protection ? voltage clamping ? high-level detecting and mixing vps05605 4 2 1 3 32 eha07008 1 4 type marking pin configuration package bas 40-07w 47s 1=c1 2=c2 3=a2 4=a1 sot-343 maximum ratings parameter value unit symbol v r 40 v diode reverse voltage ma 120 forward current i f surge forward current, t 10ms i fsm 200 p tot 250 total power dissipation , t s 81c mw c t j junction temperature 150 operating temperature range -55 ... 150 t op t st g -55 ... 150 storage temperature maximum ratings k/w junction - ambient 1) r thja 345 junction - soldering point r thjs 275 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bas 40-07w oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. typ. min. dc characteristics v - v (br) 40 breakdown voltage i (br) = 10 a - a 1 10 - - - - i r reverse current v r = 30 v v r = 40 v mv forward voltage i f = 1 ma i f = 10 ma i f = 40 ma 250 350 600 310 450 720 v f 380 500 1000 ac characteristics pf c t - diode capacitance v r = 0 v, f = 1 mhz 4 5 ps charge carrier life time i f = 25 ma 100 - - differential forward resistance i f = 10 ma, f = 10 khz r f - 10 - ?
bas 40-07w oct-07-1999 3 reverse current i r = f ( v r ) t a = parameter 0 ehb00039 bas 40... v r r 10 0 -2 10 1 10 2 10 3 10 a 10 -1 10 20 30 v 40 t a = 150 c 85 c 25 c forward current i f = f ( v f ) t a = 25c 0.0 ehb00038 bas 40... v f f 0.5 1.0 v 1.5 t a = -40 ?c 25 ?c 85 ?c 150 ?c -2 10 -1 10 ma 0 10 10 1 2 10 differential forward resistance r f = f ( i f ) f = 10 khz 0.1 ehb00041 bas 40... r f 1 10 ma 100 f ? 2 10 1 10 10 3 10 3 diode capacitance c t = f ( v r ) f = 1mhz 0 0 ehb00040 bas 40... c v r t 1 2 3 4 pf 5 10 20 v 30
bas 40-07w oct-07-1999 4 forward current i f = f ( t a *; t s) * package mounted on alumina 0? c 0 ehd07068 bar 14-1...16-1 f a t ; t s 50 100 150 20 40 60 80 100 120 140 160 ma 200 t a s t
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